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| Transmissive Photosensors (Photo Interrupters) CNA1301H Photo Interrupter 4-0.5 Unit : mm 0.5 Overview CNA1301H is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. 1.2 2.00.5 Optical center (1.0) Ultraminiature : 3.8 x 4.2 mm (height : 4.2 mm) Highly precise position detection : 0.15 mm Gap width : 1.4 mm Support for thin equipment (permits direct mounting on printed circuit board ,,, ,,, 3 4 Not solderd 1.0 max. Resin 1 the rest 2 0.7 Features 2-0.25 4.2 3.3 ,, ,,, ,,, ,, 2.0 1.5 For contactless SW, object detection 2.0 Slit width (0.3) 3.4 2.54 4.2 3-1.4 A SEC. A-A' 3.8 2-1.70.1 A' 1.50.1 2 4 2-o0.70.1 1 Pin connection 3.0 (C0.5) 3 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 6 50 75 20 35 6 75 - 40 to +100 Unit V mA mW mA V V mW C C 1: Anode 3: Collector 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is 0.2 2. ( ) Dimension is reference *1 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC *2 Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C. Topr -25 to +85 Tstg Electrical Characteristics (Ta = 25C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO VR = 3V VCE = 20V 100 35 Conditions IF = 20mA min typ 1.2 max 1.4 10 100 1300 0.4 Unit V A nA A V s Collector current IC VCE = 5V, IF = 5mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 40A characteristics Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000 * Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf ,, ,, 50 RL td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) 1 CNA1301H Transmissive Photosensors (Photo Interrupters) IF , IC -- Ta 60 60 IF -- VF 1.6 Ta = 25C VF -- Ta IF , IC (mA) 50 IF 50 IF = 50mA IF (mA) VF (V) 1.2 10mA Forward current, collector current 40 40 30 IC Forward current 30 Forward voltage 1mA 0.8 20 20 0.4 10 10 0 - 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 - 40 - 20 0 20 40 60 80 100 Ambient temperature Ta (C ) Forward voltage VF (V) Ambient temperature Ta (C ) IC -- IF 5 VCE = 5V Ta = 25C 3 IC -- VCE 120 Ta = 25C 100 IC -- Ta VCE = 5V IF = 5mA IC (mA) IC (mA) 4 IC (%) 2 80 3 Relative output current Collector current Collector current 60 2 1 IF = 20mA 15mA 10mA 5mA 2mA 40 1 20 0 0 5 10 15 20 25 0 0 1 2 3 4 5 6 0 - 40 - 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (C ) ICEO -- Ta 1 VCE = 20V 10 3 tr -- IC VCC = 5V Ta = 25C 10 3 tf -- IC VCC = 5V Ta = 25C 10 -1 ICEO (A) 10 2 10 2 RL = 2k 1k tr (s) tf (s) 10 -2 RL = 2k 1k 10 100 Rise time Dark current 10 -3 100 1 10 -4 Sig.IN Sig. OUT 50 VCC Sig. OUT RL 90% 10% Fall time 10 1 Sig.IN Sig. OUT 50 VCC Sig. OUT RL 90% 10% 10 -5 - 40 - 20 , ,, 0 20 40 60 80 100 10 -1 10 -2 tr tf 10 ,, 10 -1 10 -2 10 -1 td tr 1 td tf 10 10 -1 1 Ambient temperature Ta (C ) Collector current IC (mA) Collector current IC (mA) 2 Transmissive Photosensors (Photo Interrupters) CNA1301H IC -- d (1) 100 VCE = 5V Ta = 25C IF = 5mA 100 IC -- d (2) Relative output current IC (%) 80 Relative output current IC (%) 80 ,, , d 0 1 2 3 4 Criterion 0 60 60 40 40 20 20 0 0 0 0.5 Distance d (mm) ,, ,, Criterion 0 d 1.0 1.5 2.0 2.5 VCE = 5V Ta = 25C IF = 5mA Distance d (mm) 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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